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| 12-1 vol. 1 sales offices: visit our web site at http://www.temex.net microwave silicon components contents contents contents introduction / symbols . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12-2 silicon pin diodes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12-4 schottky diodes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12-28 tuning v aractors diodes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12-31 power genera tion diodes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12-40 case styles . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12-47 mos cap acitors: please consult page 7-39 of this catalog microwave silicon components page spirit of new technology all speci?ations contained in that catalog are subject to change without notice.
12-2 vol. 1 sales offices: visit our web site at http://www.temex.net microwave silicon components introduction this part of the microwave section presents temex product lines including: receiving diodes control diodes tuning varactors multiplier varactors step recovery diodes high voltage pin diodes temex products are available in a complete assortment of packages including: chips standard surface mount ceramic and plastic non magnetic custom in-house production the silicon slice is the in-house starting point of temex product manufacturing. from the virgin wafer, temex performs all functions, including: epitaxy diffusion photomasking metallization passivation dicing packaging control and burn-in temex uses and controls ten separate silicon-related technologies, e.g. all schottky metallurgies, all junction passivations, and all mesa operations. introduction microwave silicon components symbols 12-3 vol. 1 sales offices: visit our web site at http://www.temex.net c b . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . case capacitance c j . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . junction capacitance c t . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . total capacitance c x /c y . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . tuning ratio f . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . test frequency f co . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . cut-off frequency f i . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . frequency input f if . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . intermediate frequency f o . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . output frequency f oper . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . operating frequency i f . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . forward continuous current i r . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . reverse continuous current i rp . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . reverse pulse current l . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . conversion loss n/a . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . not applicable nf ssb . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . single sideband noise figure nf if . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . noise figure of intermediate frequency ? . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . gold contact diameter p cw . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . cw power capability p diss . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . power dissipation p in . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . power input p l . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . limiting threshold p lo . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . local oscillator power p o . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . output power p rf . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . rf power q - x . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . figure of merit r sf . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . forward series resistance r th . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . thermal resistance r v . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . video resistance i . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . minority carrier lifetime t cr . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . reverse switching time t j . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . junction temperature t so . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . snap-off time t ss . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . tangential sensitivity v br . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . breakdown voltage v f . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . forward continuous voltage v r . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . applicable voltage (rf + bias) vswr . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . voltage standing wave ratio v t . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . forward threshold voltage v to . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . threshold voltage z if . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . impedance at intermediate frequency z o . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . output impedance symbols 12-4 vol. 1 sales offices: visit our web site at http://www.temex.net silicon pin diodes selection guide silicon pin diodes selection guide p a ge ho w t o specify a pin diode? 12-5 surf a ce mount p a cka ge - pla s tic p a cka ge switching silicon pin diodes 12-6 - pla s tic p a cka ge a t tenu a ting silicon pin diodes 12-8 - l o w cos t squ are ceramic p a cka ge pin diodes 12-1 0 - squ are ceramic pin diodes 12-12 - non ma gnetic squ are ceramic p a cka ge 50 0 v pin diodes 12-15 high v ol t a ge pin diodes 12-1 7 - switching & pha se shifting applica tions 12-1 8 - t w o and three por ts rf pin switch modules 12-20 micr o w a ve applica tions 12-22 - ul traf a s t switching silicon pin diodes 12-23 - f a s t switching silicon pin diodes 12-24 - a t tenu a t or silicon pin diodes 12-25 - silicon limiter pin diodes 12-26 silicon pin diodes how to specify a pin diode 12-5 vol. 1 sales offices: visit our web site at http://www.temex.net how to specify a pin diode ? 1. application switch attenuator limiter 2. frequency and bandwidth requirements 3. power characteristics peak average pulse duration and duty cycle 4. switching time 5. bias conditions forward reverse 6. circuit impedance 7. shunt or series assembly 8. maximum loss expected 9. minimum isolation needed 10. vswr and distortion requirements 11. power applied to the diode forward biased reverse biased during switching 12.static characteristics applicable voltage: v r total capacitance: c t (in space charge) forward series resistance: r sf carrier lifetime l thermal resistance: r th 13. mechanical and packaging constraints to obtain the pin diodes best suited for a speci? application, consider the following: 12-6 vol. 1 sales offices: visit our web site at http://www.temex.net silicon pin diodes plastic package surface mount switching silicon pin diodes description temex uses its proprietary technology to manufacture its silicon pin diodes in plastic package. this product family is designed for a low cost, medium to high volume market that may be supplied in tape and reel for automated pick and place assembly on surface mount circuit boards. the use of this technology eliminates wire bonding on to the chips. applications the dh50xxx series pin diodes are offered in a large selection of capacitance range (.3 pf to 1.2 pf) and breakdown voltage (35 v to 200 v). they provide low loss (low series resistance), low switching time and low switching current. temex?diodes are designed to cover a broad range of cw low power (up to 2 w), medium peak power, rf and microwave applications (up to 3 ghz). main applications include: spst and spdt switches, antenna (wireless communication systems) and ?ter switches, phase shifters .... note: to reduce the distortion, it is necessary to verify and design with the following formula: hf l i dc f hf : rf peak current (a) l : diode minority carrier lifetime (s) i dc : dc bias current (a) f : application frequency (hz) plastic package surface mount switching silicon pin diodes << 1 packaged diodes silicon pin diodes plastic package surface mount switching silicon pin diodes 12-7 vol. 1 sales offices: visit our web site at http://www.temex.net characteristics @ ta = +25 c (1) : other breakdown values on request (4) : v r = 20 v at f = 1 mhz (2) : other capacitance values on request (5) : r sf at i f = 5 ma (3) : v r = 5 v at f = 1 mhz temperature ranges: operating junction (t j ) : -55 c to +125 c storage : -55 c to +150 c packages sod323 sot23 sot23 sot23 sot143 packages dh50051 dh50051-60 dh50051-51 dh50051-53 dh50051-54 dh50051-70 dh50058 dh50058-60 dh50058-51 dh50058-53 dh50058-54 dh50058-70 dh50053 dh50053-60 dh50053-51 dh50053-53 dh50053-54 dh50053-70 dh50103 dh50103-60 dh50103-51 dh50103-53 dh50103-54 dh50103-70 dh50109 dh50109-60 dh50109-51 dh50109-53 dh50109-54 dh50109-70 dh50203 dh50203-60 dh50203-51 dh50203-53 dh50203-54 dh50103-70 dh50209 dh50209-60 dh50209-51 dh50209-53 dh50209-54 dh50209-70 dh80051 dh80051-60 dh80051-51 dh80051-53 dh80051-54 dh80051-70 (1) other con?uration available on request. how to order? dh50051 - 51 t3 diode type package conditioning information 51: single sot23 t3: 3000 pieces 53: dual common tape & reel cathode sot23 t10: 1 0000 pieces 54: dual common tape & reel anode sot23 blank: bulk 60: single sod323 70: dual sot143 breakdown total series minority carrier voltage (v br (1) ) capacitance (c t (2) ) resistance (r sf ) lifetime ( i ) test conditions i r = 10 a f = 1 mhz i f = 10 ma i f = 10 ma v r = 50 v f = 120 mhz i r = 6 ma type vpf ? ns min. max max typ. dh50051 35 0.3 (3) 2.5 (5) 150 dh50058 35 1 (3) 0.5 200 dh50053 50 0.35 (4) 1.5 20 0 dh50103 100 0.35 3 500 dh50109 100 1.2 0.6 1000 dh50203 200 0.35 3 500 dh50209 200 1.2 0.6 1000 dh80051 400 0.6 2 2000 12-8 vol. 1 sales offices: visit our web site at http://www.temex.net silicon pin diodes plastic package surface mount attenuating silicon pin diodes plastic package surface mount attenuating silicon pin diodes description temex uses its proprietary technology to manufacture its silicon pin diodes in plastic package. this product family is designed for a low cost, medium to high volume market that may be supplied in tape and reel for automated pick and place assembly on surface mount circuit boards. the use of this technology eliminates wire bonding on to the chips. applications typical applications include variable rf attenuators and agc (automatic gain control) circuits, from mhz to several ghz. the attenuating pin diode uses properties of variation of forward series resistance versus the dc forward bias current. in order to obtain the best dynamic range, a single diode attenuator may be used in series or shunt con?uration or designed as a multiple diode circuit (t or p circuit), where the device may be matched through the attenuation range. note: to reduce the distortion, it is necessary to verify and design with the following formula: hf l i dc f hf : rf peak current (a) l : diode minority carrier lifetime (s) i dc : dc bias current (a) f : application frequency (hz) << 1 0.1 1 10 1 10 100 1000 r sf ( ? ) typical series resistance versus forward current i f (ma) dh40144 dh40225 dh40141 typical performance curve 12-9 vol. 1 sales offices: visit our web site at http://www.temex.net silicon pin diodes plastic package surface mount attenuating silicon pin diodes electrical i zone forward series junction reverse carrier parameters thickness resistance rsf ( ? ) capacitance current lifetime (1) c j (2) i r i typ. min. max min. max min. max typ. max max typ. dh40141 140 400 800 50 100 6.5 13 0.05 0.10 10 2.5 dh40144 140 200 400 25 50 3.5 7 0.10 0.30 10 5.0 dh40225 220 400 800 50 100 6.5 13 0.10 0.30 10 7.0 i f = 0.1 ma i f = 1 ma i f = 10 ma pf a s test conditions m f = 120 mhz f = 1 mhz v r = 100 v i f = 10 ma i r = 6 ma (1) other i zone thicknesses on request (2) other capacitance values on request (measured at 50 v) temperature ranges: operating junction (t j ) : - 55 c to + 125 c storage : - 65 c to + 150 c electrical characteristics at 25 c type packages sod323 sot23 sot143 packages dh40141 dh40141-60 dh40141-51 dh40141-70 dh40144 dh40144-60 dh40144-51 dh40144-70 dh40225 dh40225-60 dh40225-51 dh40225-70 (1) other con?uration available on request. how to order? dh40141 - 51 t3 diode type package conditioning information 51: single sot23 t3: 3000 pieces 53: dual common tape & reel cathode sot23 t10: 1 0000 pieces 54: dual common tape & reel anode sot23 blank: bulk 60: single sod323 70: dual sot143 87: sot323 12-10 vol. 1 sales offices: visit our web site at http://www.temex.net silicon pin diodes low cost square ceramic package pin diodes temex is manufacturing a square pin diode for surface mount applications. the chip inside is passivated to ensure high reliability and very low leakage current. these diodes ensure high power switching at frequencies from hf to few ghz. this package utilizes ceramic package technology with low inductance and leadless faced package. the design simpli?s automatic pick and place indexing and assembly. the termination contacts are tin plated for vapor or re?w circuit board soldering. the active area is a pin glass passivated chip, which can be designed to customer speci?ations. low loss, low distortion low inductance high reliability hermetically sealed package non rolling melf design pick and place compatibility description features outline drawing pinning low cost square ceramic package pin diodes chip full face bond ceramic solderable surfaces b c a a package smd4 smd6 smd8 symbol a b c a b c a b c min. 2 2.9 0.3 2.5 4.7 0.3 3.50 4.70 0.20 max 2.3 3.5 0.8 2.8 5.2 0.8 3.81 5.2 0.38 min. .079 .114 .012 .098 .185 .012 .138 .185 .008 max .091 .138 .031 .0110 .205 .031 .150 .205 .015 millimeters inches 12-11 vol. 1 sales offices: visit our web site at http://www.temex.net silicon pin diodes low cost square ceramic package pin diodes applicable total forward minority electrical package voltage capacitance series resistance carrier power parameter vc t r sf lifetime dissipation test conditions i r < 10 a f = 1 mhz f = 120 mhz i f = 10 ma contact v r = 50 v i f = 50 ma i r = 6 ma surface (1) temex square ceramic diodes are particularly suitable for high volume tape and reel assembly. several values of total capacitance are available, together with a low forward series resistance. these components are designed to meet the low distortion speci?ation required by all the mobile radio applications. due to the speci? design, these devices offer low loss and low thermal resistance performance and are characterized for high power handling. the electrical properties are ideal for use in antenna switches, ?ters, phase shifters, in all mobile radio applications from few mhz to ghz frequencies. applications electrical characteristics at 25 c vpf ? s w max typ. max typ. max min. max sqm1050 smd4 (2) 50 0.6 0.7 0.70 0.90 1.0 3.0 sqm1150 smd4 200 1.0 1.2 0.25 0.35 1.0 3.0 sqm1250 smd4 50 0.9 1.2 0.50 0.75 2.0 4.0 sqm1350 smd4 (2) 50 1.5 1.7 0.40 0.60 3.5 4.5 sqm1450 smd8 50 1.8 2.5 0.50 0.75 5.0 8.0 sqm2050 smd4 50 0.6 0.7 0.7 1.00 1.0 3 sqm2150 smd4 50 1.0 1.2 0.25 0.35 1.0 3 (1) diode brazed on in?ite copper heat sink at 25 c (2) standard package smd4 also available in smd6 temperature ranges: operating junction (t j ) : -55 c to +150 c storage : -65 c to +150 c soldering : 230 c 5 sec. type type i new! 12-12 vol. 1 sales offices: visit our web site at http://www.temex.net how to order? dh80053 - 06 t3 diode type package conditioning information -06: smd4 t1: 1000 pieces -40: smd4am tape & reel smd8am t3: 3000 pieces -20: sdm6 tape & reel -24: smd8 blank: bulk silicon pin diodes square ceramic surface mountable pin diodes square ceramic surface mountable pin diodes description these pin diodes are manufactured in a square package (smd) for surface mount applications. these packages utilize ceramic package technology with low inductance and axial terminations. this design simpli?s automatic pick and place indexing and assembly. the termination contacts are tin lead plated for vapor or re?w circuit board soldering on printed circuit boards. these diodes are particularly suited for applications in frequency hopping radios, low loss, low distortion, and ?ters in hf, vhf and uhf frequencies. packages packages smd4 smd4am smd6 smd8 smd8am dh50209 -06 -40 dh80050 -06 -40 dh80051 -06 -40 dh80052 -06 -40 dh80053 -06 -40 dh80054 -06 -40 dh80055 -06 -40 -20 dh80082 -06 -40 -20 dh80100 -06 -40 -20 dh80102 -20 -24 -44 dh80106 -24 -44 other speci?ations available on request. 12-13 vol. 1 silicon pin diodes square ceramic surface mountable pin diodes sales offices: visit our web site at http://www.temex.net electrical characteristics low voltage pin diodes breakdown total forward minority v br capacitance series resistance carrier (v) ct (pf) r sf ( ? ) t l (?) test ir = 10 ? vr = 50 v if = 50 ma if = 10 ma conditions f = 1 mhz f = 120 mhz ir = 6 ma type min. typ. max. max. min. dh50209 200 1.00 1.20 0.25 2.00 medium voltage pin diodes applicable breakdown total capacitance forward series minority max. power voltage v vbr ct resistance rsf carrier dissipation (v) (v) (pf) ( ? ) l (?) 25 c test i < 10 a ir = 10 a vr = 50 v i= 100ma i= 200 ma if= 10ma contact free conditions f = 1mhz f= 120mhz f= 120 mhz ir= 6ma surface air type max. typ. typ. max. max. min. w (1) w (2) dh80050 500 550 0.40 0.45 0.70 0.65 1.1 3.0 1.2 dh80051 500 550 0.55 0.65 0.60 0.55 1.5 3.5 1.2 dh80052 500 550 0.85 1.05 0.40 0.35 2.0 4.0 1.2 dh80053 500 550 1.05 1.20 0.35 0.30 2.5 4.0 1.5 dh80054 500 550 1.25 1.35 0.30 0.27 3.0 4.5 1.5 dh80055 500 550 1.45 1.55 0.28 0.25 3.5 4.5 1.5 (1) diode brazed on in?ite copper heat sink (2) diode brazed on epoxy circuit (pcb) 12-14 vol. 1 sales offices: visit our web site at http://www.temex.net silicon pin diodes square ceramic surface mountable pin diodes medium voltage pin diodes applicable breakdown total capacitance forward series minority max. power voltage v vbr ct resistance rsf carrier dissipation (v) (v) (pf) ( ? ) l (?) 25 c test i < 10 a ir = 10 a vr = 50 v i=100ma i=200 ma if=10ma contact free conditions f = 1mhz f=120mhz f=120 mhz ir=6ma surface air type max. typ. typ. max. max. min. w (1) w (2) dh80082 800 850 0.90 1.00 0.40 0.35 3.00 tbd tbd dh80100 1000 1100 0.55 0.65 0.70 0.60 3.00 tbd tbd dh80102 1000 1100 0.85 1.00 0.50 0.35 4.00 tbd tbd dh80106 1000 1100 1.25 2.00 0.35 0.30 7.00 tbd tbd (1) diode brazed on in?ite copper heat sink (2) diode brazed on epoxy circuit (pcb) temperature ranges operating junction (t j ) : -55 c to +150 c storage : -65 c to +150 c series resistance vs. forward current 0.1 10 100 1000 i (ma) 1 10 100 r sf ( ? ) 0 dh80052 dh80050 0.1 10 100 1000 i (ma) 0 1 10 100 r sf ( ? ) dh80053 dh80051 12-15 vol. 1 sales offices: visit our web site at http://www.temex.net silicon pin diodes non magnetic square ceramic package 500 volts pin diodes temex is manufacturing a non magnetic square pin diode for surface mount appli- cations. the properties of non magnetism prevent interference in the magnetic ?ld of the imaging system. the chip inside is passivated to ensure high reliability and very low leakage. these diodes ensure high power switching at frequencies from 1 mhz to several ghz. this package utilizes ceramic package technology with low inductance and axial terminations. the design simplifies automatic pick and place indexing and assembly. the termination contacts are tin plated for vapor or re?w circuit board soldering. the active area is a pin high power glass passivated chip which can be designed to customer speci?ations. non magnetic square ceramic package 500 volts pin diodes non magnetic package low loss, low distortion low inductance high reliability hermetically sealed package glass passivated pin diode chip non rolling melf design pick and place compatibility pinning outline drawing description features chip full face bond ceramic solderable surfaces (.126 ) +.012 -.012 3.20 +0.3 -0.3 0.635 max (.025 max) (.080 ) +.012 -0 2.00 +0.3 -0 (.080 ) +.012 -0 2.00 +0.3 -0 characteristics applicable breakdown total forward series minority power at 25 c voltage voltage capacitance resistance carrier dissipation lifetime vv br c t r sf i 12-16 vol. 1 sales offices: visit our web site at http://www.temex.net silicon pin diodes non magnetic square ceramic package 500 volts pin diodes temex non magnetic sqp diodes are particularly suitable for magnetic resonance imaging applications. the maximum operating breakdown voltage is 550 v. several values of total capacitance are available (beginning at 0.40 pf), together with a low forward series resistance. these devices are characterized for high power handling, low loss and low distortion (long carrier lifetime design). the electrical properties are ideal for use in rf coils which must produce a homogeneous electromagnetic ?ld in the mri system for frequencies from a few mhz to over 100 mhz. maximum ratings operating junction - 55 c + 150 c - 65 c + 150 c 230 c 5 sec. storage soldering dh80050-40 500 550 0.40 0.45 0.70 0.65 1.1 3.0 dh80051-40 500 550 0.55 0.65 0.60 0.55 1.5 3.5 dh80052-40 500 550 0.85 1.05 0.40 0.35 2.0 4.0 dh80053-40 500 550 1.05 1.20 0.35 0.30 2.5 4.0 dh80054-40 500 550 1.25 1.35 0.30 0.27 3.0 4.5 dh80055-40 500 550 1.45 1.55 0.25 0.22 3.5 4.5 applications electrical characteristics standard ratings - maximum limits of electrical parameters packaged diodes max typ. typ. max i f =100ma i f =200ma min. max type v v pf ? max s w test i r < 10 ? i r < 10 ? f = 1 mhz f = 120 mhz i f = 10 ma contact conditions v r = 50 v i f as below i r = 6 ma surface (1) (1) diode brazed on in?ite copper heat sink 12-17 vol. 1 sales offices: visit our web site at http://www.temex.net silicon pin diodes high voltage pin diodes these devices are most often used to control radio frequency (rf) and microwave signals. typically, high-voltage pin diodes are found in high power switches and phase shifters. temex high-voltage pin diode products are designed for very high reliability, high power handling capabilities, high isolation, and low signal distortion, especially in the hf and vhf bands. high-power multithrow switch modules are available for frequencies in the 1 mhz to 1 ghz range. all high-voltage pin diode products can be con?ured on chips or in various packages: e.g. series, shunt, ?t mount, stud mount, surface mount (smd) and (on request) non-magnetic. high voltage pin diodes the controlling element of a pin diode is its intrinsic (l) layer. the diode itself is a sandwich, i.e. a high resistivity l layer between highly doped layers of p and n materials. with negative bias on the l layer, the pin diode exhibits very high parallel resistance, e.g. acting as a switch in the off position. a positive bias causes the diode to conduct, with very low series resistance. certain applications impose speci? objectives on diode construction (e.g. in the hf and vhf band, low signal distortion can be achieved with high minority carrier lifetime l). applications characteristics silicon pin diodes high voltage pin diodes 12-18 vol. 1 sales offices: visit our web site at http://www.temex.net electrical characteristics this series of high power, high voltage pin diodes incorporates ceramic-glass passivated mesa technology. a broad range of products is available, in terms of breakdown voltages, junction capacitances and series resistances, to suit a large variety of applications, from 1 mhz to several ghz. these diodes are available in non-magnetic packages. silicon pin diodes for switching & phase shifting applications (medium & high power) pin gold dia per side min. typ. typ. max i f = 100 ma i f = 200 ma min. eh80050 0.13 0.6 500 550 0.15 0.20 0.70 0.65 1.1 eh80051 0.15 0.6 500 550 0.30 0.40 0.60 0.55 1.5 eh80052 0.25 0.8 500 550 0.60 0.70 0.40 0.30 2.0 eh80053 0.27 0.8 500 550 0.80 0.90 0.30 0.25 2.5 eh80055 0.34 0.9 500 550 1.2 1.3 0.25 0.22 3.0 eh80080 0.13 0.8 800 850 0.15 0.35 0.80 0.70 2.0 eh80083 0.27 0.9 800 850 0.80 0.90 0.40 0.30 3.0 eh80086 0.55 1.4 800 850 1.4 1.7 0.35 0.28 5.0 eh80100 0.23 0.9 1000 1100 0.30 0.40 0.70 0.60 3.0 eh80102 0.30 0.9 1000 1100 0.60 0.75 0.40 0.35 4.0 eh80106 0.55 1.4 1000 1100 1.40 1.70 0.35 0.30 7.0 v r = 100v i f = 200 ma i f = 300 ma eh80120 0.25 0.9 1200 1300 0.30 0.40 0.60 0.55 6.0 eh80124 0.65 1.5 h (2) 1200 1300 1.00 1.20 0.45 0.35 10.0 eh80126 0.75 1.7 h (2) 1200 1300 1.40 1.70 0.40 0.30 12.0 eh80129 1.25 2.2 1200 1300 2.00 2.30 0.30 0.25 15.0 eh80154 0.65 1.5 1500 1600 1.00 1.20 0.45 0.35 10.0 eh80159 1.25 2.2 1500 1600 2.00 2.30 0.30 0.25 15.0 v r = 200v i f = 200 ma i f = 300 ma eh80182 0.75 1.5 1800 1900 0.60 0.80 0.60 0.50 12.0 eh80189 1.4 2.6 h (2) 1800 1900 2.00 2.40 0.35 0.30 18.0 eh80204 0.85 1.7 2000 2100 1.00 1.30 0.50 0.40 14.0 eh80209 1.4 2.6 h (2) 2000 2100 2.00 2.40 0.35 0.30 18.0 eh80210 1.5 3 h (2) 2000 2100 3.00 3.40 0.20 0.15 25.0 description (1) other capacitance values available on request (2) hexagonal chips (between opposite ?ts) characteristics chip applicable break- junction forward series minority at 25? dimensions voltage down capacitance resistance carrier v r v br c j (1) r sf lifetime i test conditions n/a i < 10? i < 10? v r = 50 v f = 120 mhz i f =10ma f = 1 mhz i f as shown i r = 6ma type mm typ. v v pf ? max s chip and packaged diodes chip diodes 12-19 vol. 1 sales offices: visit our web site at http://www.temex.net silicon pin diodes high voltage pin diodes pin shunt isolated stud flat mounted max mhz w dh80050 f 27d bh301 bh202 20.0 50 - 20000 50 dh80051 f 27d bh301 bh202 18.0 30 - 15000 80 dh80052 f 27d bh301 bh202 15.0 20 - 10000 100 dh80053 f 27d bh301 bh202 12.0 20 - 3000 100 dh80055 f 27d bh301 bh202 10.0 10 - 1000 250 dh80080 f 27d bh301 bh202 18.0 50 - 20000 60 dh80083 f 27d bh301 bh202 12.0 20 - 10000 80 dh80086 bh35 bh301 bh202 8.0 10 - 500 200 dh80100 f 27d bh301 bh202 15.0 20 - 10000 80 dh80102 f 27d bh301 bh202 12.0 20 - 3000 100 dh80106 bh35 bh300 bh202 5.5 10 - 500 500 dh80120 f 27d bh301 bh202 15.0 10 - 8000 100 dh80124 bh35 bh300 bh200 8.0 10 - 2000 250 dh80126 bh35 bh300 bh200 6.0 10 - 500 500 dh80129 bh141 bh300 bh200 4.5 5 - 200 1000 dh80154 bh141 bh300 bh200 8.0 10 - 2000 250 dh80159 bh141 bh300 bh200 4.5 5 - 200 1000 dh80182 bh35 bh300 bh200 10 10 - 50 dh80189 bh141 bh300 bh200 4.5 15 - 200 1000 dh80204 bh141 bh300 bh200 8.0 10 - 1000 250 dh80209 bh141 bh300 bh200 4.5 1.5 - 200 1000 dh80210 bh141 bh300 bh200 2.5 1.5 - 50 1000 (3)custom cases available on request (4) r th is measured in a standard shunt case, grounded on an in?ite heatsink temperature ranges: operating junction (t j ): -55 c to +175 c storage: -65 c to +200 c ?/w frequency power thermal typical operating resistance conditions r th (4) vswr < 1.5 p diss = 1 w z 0 = 50 ? chip con?uration type standard case (3) packaged diodes 12-20 vol. 1 sales offices: visit our web site at http://www.temex.net silicon pin diodes high voltage pin diodes this series of sp2t and sp3t rf switches uses high voltage pin diodes, from the eh80000 family, to achieve very low loss and distortion. theses switches can be used from 1.5 to 1000 mhz, and can handle power levels up to 1000 w. two & three port rf pin switch modules (1) (2) typ. max min. max typ. typ. 200 mhz 100 mhz 100 ma 0 v sh90101 to39 sp2t 10 - 600 0.35 35 10 100 50 sh91101 to39 sp2t 10 - 600 0.35 35 10 100 50 400 mhz 200 mhz 100 ma 0 v sh90103 bh203 sp2t 20 - 1000 0.35 25 100 200 150 sh91103 bh203 sp2t 20 - 1000 0.35 25 100 200 150 sh92103 bh204 sp3t 20 - 1000 0.35 25 100 200 150 sh93103 bh204 sp3t 20 - 1000 0.35 25 100 200 150 100 mhz 200 mhz 200 ma 100 v sh91107 bh403a sp2t 20 - 500 0.20 33 1000 400 600 10 mhz 10 mhz 200 ma 200 v SH90207 bh405 sp2t 1.5 - 50 0.15 37 1000 1000 700 sh91207 bh405 sp2t 1.5 - 50 0.15 37 1000 1000 700 electrical characteristics description (1) series 90 and 92 : common anode (2) custom con?urations available on request series 91 and 93 : common cathode test conditions n/a f (mhz) f (mhz) cw forward reverse i f (ma) v r (v) characteristics frequency loss isolation input power suggested bias at 25? range conditions li p in type case switch mhz db db w ma v type temperature ranges: operating junction (t j ) : - 55 c to + 150 c storage : - 65 c to + 175 c 12-21 vol. 1 sales offices: visit our web site at http://www.temex.net silicon pin diodes high voltage pin diodes internal wiring diagrams typical performances i nsertion loss and isolation versus frequency 10 20 30 50 70 100 200 400 (mhz) f 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 28 30 32 34 36 38 40 42 44 insertion loss (db) isolation (db) isolation insertion loss 600 0.9 46 20 30 50 70 100 200 400 700 1000 (mhz) f 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 20 24 28 32 36 40 44 48 52 insertion loss (db) isolation (db) isolation insertion loss 20 30 50 70 100 200 300 500 (mhz) f 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 20 24 28 32 36 40 44 48 52 insertion loss (db) isolation (db) isolation insertion loss 12357102030 (mhz) f 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 30 33 36 38 42 45 48 51 54 insertion loss (db) isolation (db) isolation insertion loss 50 common anode sh90101 sh91101 common cathode bottom view sh90103 sh91103 sh92103 sh93103 sh91107 SH90207 sh91207 bias bias bias bias 12-22 vol. 1 sales offices: visit our web site at http://www.temex.net silicon pin diodes microwave applications low and medium voltage pin diode applications microwave applications the most common uses of these devices are: fast switching, attenuation and limiting. they operate at frequencies from a few mhz to 100 ghz. in switching applications, e.g. timing digital bit streams, these pin diodes support signal power levels below 30 w, up to 100 ghz. thin i layers, from 1 to 50 ?, and passivated mesa technology in chip con?urations, yield very low junction capacitance (c j ), i.e. below 0.025 pf. as attenuators, e.g. in automatic gain control (agc) circuits, these pin diodes are manufactured with a proprietary technology. this technology optimizes the relationship between c j and r sf (forward series resistance), offering a high minority carrier lifetime l , which minimizes signal distortion. in limiting applications, e.g. passive protection for receivers, these pin diodes operate as power dependent variable resistors. 12-23 vol. 1 sales offices: visit our web site at http://www.temex.net silicon pin diodes microwave applications for ultrafast switching, these passivated mesa diodes have a thin i layer (< 10 ?). ultrafast switching silicon pin diodes case typ. min. typ. max max typ. typ. c b =c b = max c2a (1) 0.18 pf 0.12 pf (2) (2) eh50033 25 30 0.08 0.12 1.8 20 2.0 dh50033 f27d m208 80 eh50034 30 30 0.12 0.17 1.5 20 2.0 dh50034 f27d m208 80 eh50035 35 30 0.17 0.23 1.0 25 2.5 dh50035 f27d m208 70 eh50036 55 30 0.23 0.40 0.9 30 3.0 dh50036 f27d m208 60 eh50037 65 30 0.40 0.60 0.7 40 4.0 dh50037 f27d m208 50 eh50052 30 50 0.06 0.08 1.6 30 3.0 dh50052 f27d m208 80 eh50053 35 50 0.08 0.12 1.4 30 3.0 dh50053 f27d m208 70 eh50054 40 50 0.12 0.17 1.1 35 4.0 dh50054 f27d m208 60 eh50055 50 50 0.17 0.23 1.0 40 4.0 dh50055 f27d m208 50 eh50056 65 50 0.23 0.40 0.9 50 5.0 dh50056 f27d m208 45 eh50057 80 50 0.40 0.60 0.7 60 6.0 dh50057 f27d m208 45 eh50071 35 70 0.04 0.06 2.0 50 5.0 dh50071 f27d m208 70 eh50072 40 70 0.06 0.08 1.7 50 5.0 dh50072 f27d m208 70 eh50073 45 70 0.08 0.12 1.6 60 6.0 dh50073 f27d m208 60 eh50074 50 70 0.12 0.17 1.4 60 6.0 dh50074 f27d m208 50 eh50075 60 70 0.17 0.23 1.0 100 10.0 dh50075 f27d m208 45 eh50076 80 70 0.23 0.40 0.9 100 10.0 dh50076 f27d m208 40 eh50077 100 70 0.40 0.60 0.7 150 15.0 dh50077 f27d m208 40 eh50101 45 100 0.04 0.06 1.9 150 15.0 dh50101 f27d m208 60 eh50102 50 100 0.06 0.08 1.7 150 15.0 dh50102 f27d m208 60 eh50103 60 100 0.08 0.12 1.4 200 20.0 dh50103 f27d m208 55 eh50104 70 100 0.12 0.17 1.2 250 25.0 dh50104 f27d m208 50 eh50105 90 100 0.17 0.23 1.0 300 30.0 dh50105 f27d m208 40 eh50106 110 100 0.23 0.40 0.8 400 40.0 dh50106 f27d m208 35 eh50107 130 100 0.40 0.60 0.6 500 50.0 dh50107 f27d m208 35 type ? v pf ? ns ns type standard cases (1) ?/w test i r = 10 ? v r = 6 v i f = 10 ma i f = 10 m ai f = 20 ma p diss conditions f = 1 mhz f = 120 mhz i r = 6 ma v r = 10 v 1 w 50 ? f 27 d characteristics gold breakdown junction series minority reverse thermal at 25? dia voltage capacitance resistance carrier switching r esistance lifetime time v br c j r sf i t cr r th electrical characteristics description (1) custom cases available on request temperature ranges: (2) c t = c j + c b operating junction (t j ) : -55 c to +175 c storage : -65 c to +200 c chip diodes chip and packaged diodes packaged diodes 12-24 vol. 1 sales offices: visit our web site at http://www.temex.net silicon pin diodes microwave applications for fast switching, these passivated mesa diodes have a medium i layer (< 50 ?). fast switching silicon pin diodes case typ. min. typ. max max typ. typ. c b =c b = max c2a (1) 0.18 pf 0.12 pf (2) (2) eh50151 55 150 0.04 0.06 2.0 200 20 dh50151 f27d m208 50 eh50152 60 150 0.06 0.08 1.7 230 23 dh50152 f27d m208 50 eh50153 70 150 0.08 0.12 1.5 300 30 dh50153 f27d m208 45 eh50154 90 150 0.12 0.17 1.4 500 50 dh50154 f27d m208 40 eh50155 110 150 0.17 0.23 1.0 550 55 dh50155 f27d m208 35 eh50156 130 150 0.23 0.40 0.8 800 80 dh50156 f27d m208 30 eh50157 150 150 0.40 0.60 0.6 950 95 dh50157 f27d m208 30 eh50201 60 200 0.04 0.06 2.3 300 30 dh50201 f27d m208 45 eh50202 65 200 0.06 0.08 2.1 400 40 dh50202 f27d m208 45 eh50203 75 200 0.08 0.12 1.5 500 50 dh50203 f27d m208 40 eh50204 100 200 0.12 0.17 1.3 650 65 dh50204 f27d m208 35 eh50205 120 200 0.17 0.23 1.0 800 80 dh50205 f27d m208 30 eh50206 150 200 0.23 0.40 0.8 950 95 dh50206 f27d m208 30 eh50207 170 200 0.40 0.60 0.7 1050 100 dh50207 f27d m208 25 eh50251 65 250 0.04 0.06 2.4 330 33 dh50251 f27d m208 40 eh50252 75 250 0.06 0.08 2.2 500 50 dh50252 f27d m208 40 eh50253 100 250 0.08 0.12 2.0 900 90 dh50253 f27d m208 35 eh50254 130 250 0.12 0.17 1.4 900 90 dh50254 f27d m208 30 eh50255 160 250 0.17 0.23 0.9 1000 100 dh50255 f27d m208 30 eh50256 180 250 0.23 0.40 0.8 1150 110 dh50256 f27d bh142 25 eh50401 80 400 0.04 0.06 2.5 700 70 dh50401 f27d m208 35 eh50402 90 400 0.06 0.08 2.3 800 80 dh50402 f27d m208 35 eh50403 120 400 0.08 0.12 2.1 1000 100 dh50403 f27d m208 30 eh50404 150 400 0.12 0.17 1.8 1500 150 dh50404 f27d bh142 25 eh50405 200 400 0.17 0.23 1.6 2000 200 dh50405 f27d bh142 20 electrical electrical characteristics description (1) chip presentation c2a, except: temperature ranges: c2b for eh50256, eh50404 and eh50405 operating junction (t j ) : -55 c to +175 c (2) custom cases available on request storage : -65 c to +200 c (3) c t = c j + c b type ? v pf ? ns ns type standard cases (2) ?/w test i r = 10 ? v r = 50 v i f = 10 ma i f = 10 m ai f = 20 ma p diss conditions f = 1 mhz f = 120 mhz i r = 6 ma v r = 10 v 1 w 50 ? f27 d characteristics gold breakdown junction series minority reverse thermal at 25? dia voltage capacitance resistance carrier switching r esistance lifetime time v br c j r sf i t cr r th chip diodes chip and packaged diodes packaged diodes 12-25 vol. 1 sales offices: visit our web site at http://www.temex.net silicon pin diodes microwave applications the table below presents a single set of values from the variety of customer options available for this series of passivated pin diodes. temex uses its proprietary technology, which enables the customer to incorporate characteristics speci? to the application involved, e.g. capacitance and i zone thickness. typical applications include variable rf attenuators and agc (automatic gain control) circuits, from a few mhz to several ghz. attenuator silicon pin diodes eh40073 c4c 70 70 140 8 16 1.0 2.0 0.30 0.50 10 1.5 2.0 dh40073 f 27d eh40141 c4a 140 400 800 50 100 6.5 13.0 0.05 0.10 10 1.5 2.5 dh40141 f 27d eh40144 c4c 140 200 400 25 50 3.5 7.0 0.10 0.30 10 4.0 5.0 dh40144 f 27d eh40225 c4d 220 400 800 50 100 6.5 13.0 0.10 0.30 10 5.5 7.0 dh40225 f 27d electrical characteristics description typical series resistance vs forward current 0.1 1 10 1 10 100 1000 r sf ( ? ) i f (ma) eh40141 - eh40225 eh40144 eh40073 100 (1) other i zone thicknesses available on request temperature ranges: (2) other capacitance values available on request operating junction (t j ) : -55 c to +175 c (3) custom cases available on request storage : -65 c to +200 c charact. at 25? typ. min. max min. max min. max typ. max max min. typ. test conditions type i f = 0.1 ma ? i f = 1 ma ? i f = 10 ma ? pf ? ? type standard package (3) f = 1 mhz v r = 50 v i f = 10 ma i r = 6 ma f = 120 mhz v r = 100 v series resistance r sf junction capacitance c j (2) reverse current i r minority carrier lifetime i i z one t hickness (1) ? c o n f i g u r a t i o n chip diodes chip and packaged diodes packaged diodes 12-26 vol. 1 sales offices: visit our web site at http://www.temex.net silicon pin diodes microwave applications typ. min. max typ. min. max max typ. eh60033 c2a 25 25 50 0.14 0.08 0.12 1.8 20 eh60034 c2a 30 25 50 0.20 0.12 0.17 1.5 20 eh60035 c2a 35 25 50 0.28 0.17 0.23 1.0 25 eh60036 c2a 55 25 50 0.45 0.23 0.40 0.9 30 eh60037 c2a 65 25 50 0.70 0.40 0.60 0.7 40 eh60052 c2a 30 50 70 0.10 0.06 0.08 1.8 30 eh60053 c2a 35 50 70 0.14 0.08 0.12 1.4 30 eh60054 c2a 40 50 70 0.20 0.12 0.17 1.1 35 eh60055 c2a 50 50 70 0.28 0.17 0.23 1.0 40 eh60056 c2a 65 50 70 0.45 0.23 0.40 0.9 50 eh60057 c2a 80 50 70 0.70 0.40 0.60 0.8 60 eh60072 c2a 40 70 90 0.10 0.06 0.08 1.7 50 eh60074 c2a 50 70 90 0.20 0.12 0.17 1.4 60 eh60076 c2a 80 70 90 0.45 0.23 0.40 0.9 100 eh60102 c2a 50 90 120 0.10 0.06 0.08 1.7 150 eh60104 c2a 70 90 120 0.20 0.12 0.17 1.2 250 eh60106 c2a 110 90 120 0.45 0.23 0.40 0.8 400 these passivated mesa pin diodes have a thin i layer. this series of diodes is available as chips and in hermetic ceramic packages. they operate as power dependent variable resistances and provide passive receiver protection (low noise ampli?rs, mixers, and detectors). silicon limiter pin diodes electrical characteristics description (1) other values of capacitance available on request type case m v pf pf ? ns test conditions i r =10 a v r =0v v r =6v i f =10ma f = 1 mhz f = 1 mhz f = 120 mhz characteristics at 25? g old d ia breakdown voltage v br junction capacitance c j0 junction capacitance c j -6 (1) series resistance r sf minority carrier lifetime i i f =10ma i r = 6 ma chip diodes packaged diodes 12-27 vol. 1 sales offices: visit our web site at http://www.temex.net silicon pin diodes microwave applications c b = 0.12 pf (3) dh60033 f 27d m208 80 + 10 + 20 0.1 + 50 2.0 dh60034 f 27d m208 80 + 10 + 20 0.1 + 50 2.0 dh60035 f 27d m208 70 + 10 + 21 0.1 + 52 2.5 dh60036 f 27d m208 60 + 10 + 22 0.2 + 53 3.0 dh60037 f 27d m208 50 + 10 + 23 0.2 + 56 4.0 dh60052 f 27d m208 80 + 15 + 24 0.1 + 52 2.5 dh60053 f 27d m208 70 + 15 + 24 0.1 + 52 2.5 dh60054 f 27d m208 60 + 15 + 25 0.1 + 53 3.0 dh60055 f 27d m208 50 + 15 + 26 0.1 + 54 3.5 dh60056 f 27d m208 45 + 15 + 27 0.2 + 57 4.0 dh60057 f 27d m208 45 + 15 + 28 0.2 + 58 5.0 dh60072 f 27d m208 70 + 18 + 27 0.1 + 54 3.0 dh60074 f 27d m208 50 + 18 + 30 0.2 + 55 4.0 dh60076 f 27d m208 40 + 18 + 32 0.2 + 58 5.0 dh60102 f 27d m208 60 + 20 + 31 0.2 + 56 3.5 dh60104 f 27d m208 50 + 20 + 33 0.2 + 59 5.0 dh60106 f 27d m208 35 + 20 + 35 0.3 + 61 7.0 (2) other capacitance values available on request temperature ranges: (3) c t = c j +c b operating junction (t j ) : -55 c to +125 c storage : -65 c to +200 c type standard case (2) test conditions p diss = 1w case f 27d f = 2.7 ghz 1db limiting f = 2.7 ghz f = 2.7 ghz p in = -10 dbm 1 ? pulse 1% dc characteristics at 25? thermal resistance r th threshold p l leakage power p out insertion loss l peak power p in cw power p in ?/w dbm dbm db dbm w c b = 0.18 pf (3) max typ. typ. typ. max max packaged diodes nominal microwave characteristics 12-28 vol. 1 sales offices: visit our web site at http://www.temex.net silicon schottky diodes selection guide selection guide page scho t tky barrier detect or diodes 12-29 scho t tky barrier mixer diodes 12-30 silicon schottky diodes 12-29 vol. 1 sales offices: visit our web site at http://www.temex.net silicon schottky diodes silicon schottky barrier detector diodes dh340 f51 2 - 12 - 54 1 2 250 50 3 12 - 18 - 51 type case (1) ghz dbm k ? mw ma v test conditions n/a video bandwidth = 1 mhz i f = 30 ? cw n/a i r = 10 ? min. min. max max max typ. silicon schottky barrier detector diodes are available as: packaged diodes chip they are optimized for wide band applications, in the frequency range from 1 to 18 ghz. silicon schottky barrier detector diodes 12 5 1020 f (ghz) -51 -52 -54 -56 t ss (dbm) electrical characteristics packaged diodes description t = + 25 c ? f = 30 ? video bandwidth = 1 mhz (1) custom cases available on request temperature ranges: operating junction (t j ) : -55 c to +150 c storage : -65 c to +175 c typical tangential sensitivity vs frequency characteristics at 25? frequency range f oper tangential sensitivity t ss video resistance r v rf power p rf forward continuous curren t i f breakdown voltage v br 12-30 vol. 1 sales offices: visit our web site at http://www.temex.net silicon schottky diodes silicon schottky barrier mixer diodes dh301 f51 1 - 6 6.5 1.5 2 200 400 5 3 0.40 dh302 f51 1 - 6 6.0 1.5 2 200 400 5 3 0.40 dh303 f51 1 - 6 5.5 1.5 2 200 400 5 3 0.40 dh312 f51 6 - 12 7.0 1.5 2 200 400 5 3 0.25 dh313 f51 6 - 12 6.5 1.5 2 200 400 5 3 0.25 dh314 f51 6 - 12 6.0 1.5 2 200 400 5 3 0.25 dh315 f51 6 - 12 5.5 1.5 2 200 400 5 3 0.25 dh322 f51 12 - 18 7.5 1.5 2 200 400 5 3 0.17 dh323 f51 12 - 18 7.0 1.5 2 200 400 5 3 0.17 dh324 f51 12 - 18 6.5 1.5 2 200 400 5 3 0.17 dh325 f51 12 - 18 6.0 1.5 2 200 400 5 3 0.17 silicon schottky barrier mixer diodes are available in the following con?urations: packaged chip low barrier diodes are required for applications where the local oscillator (lo) drive level is between - 10 dbm and + 10 dbm. medium barrier diodes are required for applications where the lo drive level is between - 5 dbm and + 15 dbm. the use of a passivated planar construction contributes to high reliability. silicon schottky barrier mixer diodes electrical characteristics packaged diodes description rf power max: 250 mw cw temperature ranges: operating junction (t j ) : -55 c to +150 c (1) noise ?ure measurement conditions: storage : -65 c to +175 c p lo = 1 mw f if = 30 mhz nf if = 1.5 db noise tube: 15.6 db dc load = 10 ? test frequencies: 3.0, 9.3 or 15.0 ghz (2) custom cases available on request type case (2) ghz db ratio ? ergs v pf i r = 10 ? f=1mh z v r =0v pulse = 3 n s f = 30 mh z p lo = 1 mw n/a characteristics at 25? vswr (ratio) if impedance z if test pulse energy breakdown voltage v br total capacitance c to frequency range f oper ssb noise ?ure nf ssb test conditions n/a (1) max typ. max min. max max typ. typ. 12-31 vol. 1 sales offices: visit our web site at http://www.temex.net tuning varactor selection guide selection guide page surf a ce mount silicon abrupt tuning v ara ct or 12-32 high q silicon abrupt junction tuning v ara ct or - vbr = 30 v 12-34 - vbr = 45 v 12-35 silicon hyperabrupt junction tuning v ara ct or 12-36 micr o w a ve silicon hyperabrupt junction tuning v ara ct or 12-39 a tuning varactor is a p-n diode that acts as a voltage controlled capacitor. these devices perform the same function as the familiar, bulky, air dielectric stacked capacitors featured in traditional broadcast band receivers. tuning varactor 12-32 vol. 1 sales offices: visit our web site at http://www.temex.net tuning varactor plastic package surface mount silicon abrupt tuning varactor description this series of silicon tuning varactors have an epitaxial mesa design with a high temperature passivation. this technology is used to produce abrupt tuning varactor in sot23 package. this family is designed for a low cost medium to high volume market that may be supplied in tape and reel for automated pick and place assembly on surface mount circuit boards. applications the dh71000 series abrupt tuning varactor are offered in a large selection of capacitance range. they provide the highest q factor (low reverse series resistance) available for a 30 volts silicon device. typical applications include low noise narrow and moderate frequency bandwidth applications (vco mainly) from hf to microwave frequencies (up to 3 ghz). other applications are voltage tuned ?ters, phase shifters, delay line, etc. note: variation of the junction capacitance versus reverse voltage follows this equation: c j (v r ) c j (0 v) 1 + v r v r : reverse voltage : built-in potential .7v for si : .5 for abrupt tuning varactor [ ] sot23 surface mount silicon abrupt tuning varactor = 12-33 vol. 1 sales offices: visit our web site at http://www.temex.net tuning varactor plastic package surface mount silicon abrupt tuning varactor dh71010 30 1.0 20% 4.0 4300 dh71016 30 1.6 20% 4.5 4100 dh71020 30 2.0 20% 4.6 3900 dh71030 30 3.0 20% 4.7 3400 dh71045 30 4.5 20% 4.8 2200 dh71067 30 6.7 10% 4.9 2600 dh71100 30 10 10% 5.0 2200 (1) other tolerance on request temperature ranges: operating junction (t j ): -55 c to +125 c storage: -65 c to +150 c min. (1) vpf electrical breakdown junction tuning figure parameters voltage capacitance ratio of merit v br c j q test conditions i r = 10 ? f = 1 mhz c j0v /c j30v v r = 4 v v r = 4 v f = 50 mhz electrical characteristics at ta = +25 c reverse breakdown voltage, vb = @10 ?: 30 v min. type typ. typ. packages sod323 sot23 sot23 sot23 sot143 packages dh71010 dh71010-60 dh71010-51 dh71010-53 dh71010-54 dh71010-70 dh71016 dh71016-60 dh71016-51 dh71016-53 dh71016-54 dh71016-70 dh71020 dh71020-60 dh71020-51 dh71020-53 dh71020-54 dh71020-70 dh71030 dh71030-60 dh71030-51 dh71030-53 dh71030-54 dh71030-70 dh71045 dh71045-60 dh71045-51 dh71045-53 dh71045-54 dh71045-70 dh71067 dh71067-60 dh71067-51 dh71067-53 dh71067-54 dh71067-70 dh71100 dh71100-60 dh71100-51 dh71100-53 dh71100-54 dh71100-70 (1) other con?uration available on request. how to order? dh71010 - 51 t3 diode type package conditioning information 51: single sot23 t3: 3000 pieces 53: dual common tape & reel cathode sot23 t10: 1 0000 pieces 54: dual common tape & reel anode sot23 blank: bulk 60: single sod323 70: dual sot143 12-34 vol. 1 sales offices: visit our web site at http://www.temex.net tuning varactor high q silicon abrupt junction tuning varactor typ. 20 % (2) min. c b = 0.18 pf (3) min. c b = 0.12 pf (3) min. eh71004 c2a 50 0.4 4500 dh71004 f27d 3.0 m208 3.3 eh71006 c2a 60 0.6 4500 dh71006 f27d 3.4 m208 3.7 eh71008 c2a 70 0.8 4400 dh71008 f27d 3.7 m208 4.0 eh71010 c2a 80 1.0 4300 dh71010 f27d 4.0 m208 4.3 eh71012 c2a 90 1.2 4200 dh71012 f27d 4.3 m208 4.5 eh71016 c2a 100 1.6 4100 dh71016 f27d 4.5 m208 4.6 eh71020 c2a 110 2.0 3900 dh71020 f27d 4.6 m208 4.7 eh71025 c2a 120 2.5 3600 dh71025 f27d 4.6 m208 4.8 eh71030 c2a 140 3.0 3400 dh71030 f27d 4.7 m208 4.8 eh71037 c2a 150 3.7 3200 dh71037 f27d 4.7 m208 4.8 eh71045 c2a 170 4.5 3000 dh71045 f27d 4.8 m208 4.9 eh71054 c2a 180 5.4 2800 dh71054 f27d 4.8 m208 4.9 10 % (2) c b = 0.18 pf (3) c b = 0.2 pf (3) eh71067 c2a 200 6.7 2600 dh71067 f27d 4.9 bh142 4.9 eh71080 c2b 220 8.0 2400 dh71080 f27d 5.0 bh142 5.0 eh71100 c2b 250 10.0 2200 dh71100 f27d 5.0 bh142 5.0 eh71120 c2b 270 12.0 2000 dh71120 f27d 5.1 bh142 5.1 eh71150 c2b 300 15.0 1800 dh71150 f27d 5.1 bh142 5.1 eh71180 c2b 330 18.0 1700 dh71180 f27d 5.2 bh142 5.2 eh71200 c2b 350 20.0 1500 dh71200 f27d 5.2 bh142 5.2 eh71220 c2b 370 22.0 1400 dh71220 f27d 5.2 bh142 5.2 eh71270 c2b 410 27.0 1300 dh71270 f27d 5.2 bh142 5.2 eh71330 c2c 450 33.0 1200 dh71330 f27d 5.2 bh142 5.2 eh71390 c2c 500 39.0 950 dh71390 f27d 5.2 bh142 5.2 eh71470 c2c 540 47.0 750 dh71470 f27d 5.2 bh142 5.2 eh71560 c2c 590 56.0 650 dh71560 f27d 5.2 bh142 5.2 eh71680 c2c 650 68.0 500 dh71680 f27d 5.2 bh142 5.2 eh71820 c2d 720 82.0 400 dh71820 f27d 5.2 bh142 5.2 eh71999 c2d 800 100.0 300 dh71999 f27d 5.2 bh142 5.2 v br 30 v this series of high q epi-junction microwave tuning varactors (30 v) incorporates a passivated mesa technology. it is well suited for frequency tuning applications up to ku band. description (1) custom cases available on request temperature ranges: (2) closer capacitance tolerances available on request operating junction (t j ) : -55 c to +150 c (3) c t = c j + c b storage : -65 c to +175 c type case m pf type case case c ase c ase c apacitance c apacitance c b c b v r = 4 v v r = 4 v f= 1 mh z f = 50 mh z test conditions gold junction fig. of tuning tuning dia capacitance merit ratio ratio c j qc to /c t 30 c to /c t 30 characteristics at 25? v br (10 ?) 30 v standard cases other cases c hip d iodes c hip and p ackaged d iodes p ackaged d iodes (1) high q silicon abrupt junction tuning varactor 12-35 vol. 1 sales offices: visit our web site at http://www.temex.net tuning varactor high q silicon abrupt junction tuning varactor typ. 20 % (2) min. c b = 0.18 pf (3) min. c b = 0.12 pf (3) min. eh72004 c2a 60 0.4 3000 dh72004 f27d 3.5 m208 3.7 eh72006 c2a 80 0.6 2900 dh72006 f27d 3.9 m208 4.1 eh72008 c2a 90 0.8 2800 dh72008 f27d 4.2 m208 4.5 eh72010 c2a 110 1.0 2700 dh72010 f27d 4.5 m208 4.7 eh72012 c2a 110 1.2 2700 dh72012 f27d 4.7 m208 4.9 eh72016 c2a 120 1.6 2600 dh72016 f27d 5.0 m208 5.2 eh72020 c2a 140 2.0 2500 dh72020 f27d 5.2 m208 5.5 eh72025 c2a 150 2.5 2400 dh72025 f27d 5.4 m208 5.6 eh72030 c2a 170 3.0 2300 dh72030 f27d 5.5 m208 5.7 eh72037 c2a 190 3.7 2200 dh72037 f27d 5.6 m208 5.7 eh72045 c2a 210 4.5 2000 dh72045 f27d 5.7 m208 5.8 eh72054 c2a 230 5.4 1900 dh72054 f27d 5.8 m208 5.9 10 % (2) c b = 0.18 pf (3) c b = 0.2 pf (3) eh72067 c2b 250 6.7 1800 dh72067 f27d 5.9 bh142 6.0 eh72080 c2b 280 8.0 1700 dh72080 f27d 5.9 bh142 6.0 eh72100 c2b 310 10.0 1600 dh72100 f27d 6.0 bh142 6.0 eh72120 c2b 340 12.0 1500 dh72120 f27d 6.0 bh142 6.0 eh72150 c2b 380 15.0 1400 dh72150 f27d 6.0 bh142 6.0 eh72180 c2b 420 18.0 1300 dh72180 f27d 6.0 bh142 6.0 eh72200 c2b 440 20.0 1200 dh72200 f27d 6.0 bh142 6.0 eh72220 c2c 470 22.0 1100 dh72220 f27d 6.0 bh142 6.0 eh72270 c2c 520 27.0 1000 dh72270 f27d 6.0 bh142 6.0 eh72330 c2c 570 33.0 900 dh72330 f27d 6.0 bh142 6.0 eh72390 c2c 620 39.0 800 dh72390 f27d 6.0 bh142 6.0 10 % (2) c b = 0.18 pf (3) eh72470 c2d 680 47.0 700 dh72470 bh28 6.0 eh72560 c2d 740 56.0 600 dh72560 bh28 6.0 eh72680 c2d 820 68.0 450 dh72680 bh28 6.0 10 % (2) c b = 0.4 pf (3) eh72820 c2g 900 82.0 350 dh72820 bh141 6.0 eh72999 c2g 1000 100.0 250 dh72999 bh141 6.0 this series of high q epi-junction microwave tuning varactors (45 v) incorporates a passivated mesa technology. it is well suited for frequency tuning applications up to x band. description (1) custom cases available on request temperature ranges: (2) closer capacitance tolerances available on request operating junction (t j ) : -55 c to +150 c (3) c t = c j + c b storage : -65 c to +175 c type case m pf type case case case case capacitance capacitance c b c b test conditions g old junction fig. of tuning tuning d ia c apacitance m erit ratio ratio c j qc to /c t 45 c to /c t 45 characteristics at 25 c v br (10 ?) 45 v s tandard c ases o ther c ases chip diodes chip and packaged diodes packaged diodes (1) v br 45 v v r = 4 v v r = 4 v f= 1 mh z f = 50 mh z 12-36 vol. 1 sales offices: visit our web site at http://www.temex.net tuning varactor plastic package, surface mount hyperabrupt tuning varactor plastic package, surface mount hyperabrupt tuning varactor description this series of silicon tuning varactors consists of hyperabrupt epitaxial devices. they incorporate a passivated mesa technology. this family is designed for a low cost medium to high volume market that may be supplied in tape and reel for automated pick and place assembly on surface mount circuit boards. application the dh76000 and dh77000 series hyperabrupt tuning varactor are offered in a large selection of capacitance range. they provide the highest q factor (low reverse series resistance). typical applications include low noise narrow and moderate frequency bandwidth applications (vco mainly) from hf to microwave frequencies (up to 3 ghz). other applications are voltage tuned ?ters, phase shifters, delay lines... 20 volt hyperabrupt junction varactors characteristics @ ta=+25 c temperature ranges: reverse breakdown voltage, vb = 20 v min. @ 10 ? operating junction (tj) : -55 c to +125 c reverse current, ir = 200 na @ 16 v storage : -55 c to +150 c total capacitance (pf) tuning ct ratio test f = 1 mhz f = 1 mhz f=1 mhz f = 1 mhz ct1v/ct12v ct1v/ct20v conditions vr = 1 v vr = 4 v vr = 12 v vr = 20 v f = 1 mhz f = 1 mhz type typ 20 % typ. typ. typ. typ. dh76010 2.5 1.2 0.6 0.5 4.1 4.9 dh76015 3.6 1.7 0.8 0.7 4.4 5.4 dh76022 5.2 2.4 1.1 0.9 4.7 5.8 dh76033 8.0 3.5 1.6 1.3 4.9 6.1 dh76047 11.0 4.9 2.2 1.7 5.0 6.4 dh76068 16.0 7.0 3.1 2.4 5.1 6.5 dh76100 23.0 10.0 4.5 3.5 5.2 6.7 dh76150 35.0 15.0 6.6 5.1 5.2 6.8 12 volt hyperabrupt junction varactors characteristics @ ta=+25 c temperature ranges: reverse breakdown voltage, vb = 12 v min. @ 10 ? operating junction (tj) : -55 c to +125 c reverse current, ir = 200 na @ 8 v storage : -55 c to +150 c total capacitance (pf) tuning ct ratio test f = 1 mhz f = 1 mhz f=1 mhz ct1v/ct2.5v ct1v/ct4v conditions vr = 1 v vr = 2.5 v vr = 4 v f = 1 mhz f = 1 mhz type typ 20 % typ. typ. typ. dh77033 6.0 3.5 1.9 1.7 3.1 dh77047 8.5 4.9 2.7 1.7 3.2 dh77068 12.0 7.0 3.8 1.7 3.2 dh77100 18.0 10.0 5.5 1.7 3.2 dh77150 27.0 15.0 8.1 1.8 3.3 12-37 vol. 1 sales offices: visit our web site at http://www.temex.net tuning varactor plastic package, surface mount hyperabrupt tuning varactor typical junction capacitance versus reverse voltage vr (v) 0.10 1.00 0.1 0.01 100 100.00 c j (pf) profils in cj 76010 76015 76022 76033 76047 76068 76100 76150 10 10.00 0.1 1 10 v (v) cj (pf) 1 100 dh77150 dh77033 dh77047 dh77068 dh77100 10 tuning varactor plastic package, surface mount hyperabrupt tuning varactor 12-38 vol. 1 sales offices: visit our web site at http://www.temex.net packages sod323 sot23 sot23 sot23 sot143 packages dh76010 dh76010-60 dh76010-51 dh76010-53 dh76010-54 dh76010-70 dh76015 dh76015-60 dh76015-51 dh76015-53 dh76015-54 dh76015-70 dh76022 dh76022-60 dh76022-51 dh76022-53 dh76022-54 dh76022-70 dh76033 dh76033-60 dh76033-51 dh76033-53 dh76033-54 dh76033-70 dh76047 dh76047-60 dh76047-51 dh76047-53 dh76047-54 dh76047-70 dh76068 dh76068-60 dh76068-51 dh76068-53 dh76068-54 dh76068-70 dh76100 dh76100-60 dh76100-51 dh76100-53 dh76100-54 dh76100-70 dh76150 dh76150-60 dh76150-51 dh76150-53 dh76150-54 dh76150-70 dh77033 dh77033-60 dh77033-51 dh77033-53 dh77033-54 dh77033-70 dh77047 dh77047-60 dh77047-51 dh77047-53 dh77047-54 dh77047-70 dh77068 dh77068-60 dh77068-51 dh77068-53 dh77068-54 dh77068-70 dh77100 dh77100-60 dh77100-51 dh77100-53 dh77100-54 dh77100-70 dh77150 dh77150-60 dh77150-51 dh77150-53 dh77150-54 dh77150-70 (1) other con?uration available on request. how to order? dh76150 - 51 t3 diode type package conditioning information 51: single sot23 t3: 3000 pieces 53: dual common tape & reel cathode sot23 t10: 1 0000 pieces 54: dual common tape & reel anode sot23 blank: bulk 60: single sod323 70: dual sot143 tuning varactor high q silicon hyperabrupt junction tuning varactor 12-39 vol. 1 high q silicon hyperabrupt junction tuning varactor description this series of silicon tuning varactors consists of hyperabrupt epitaxial devices. they incorporate a passivated mesa technology. packaged or chip devices are available for linear electronic tuning from vhf up to ku band. characteristics @ ta = +25 c reverse breakdown voltage, vb = @ 10 ?: 20 v min. reverse current, ir @ 16 v: 200 na figure of total capacitance (pf) tuning merit (q) ct ratio test f = 50 mhz f = 1 mhz f = 1 mhz f = 1 mhz f = 1 mhz ct1v/ct12v ct1v/ct20v conditions vr = 4 v vr = 1 v vr = 4 v vr = 12 v vr = 20 v f = 1 mhz f = 1 mhz type case (1) typ. typ. 20% typ. typ. typ. typ. chip dh76010 f27d 2200 2.5 1.2 0.6 0.5 4.1 4.9 eh76010 dh76015 f27d 2000 3.6 1.7 0.8 0.7 4.4 5.4 eh76015 dh76022 f27d 1700 5.2 2.4 1.1 0.9 4.7 5.8 eh76022 dh76033 f27d 1400 7.7 3.5 1.6 1.3 4.9 6.1 eh76033 dh76047 f27d 1000 11 4.9 2.2 1.7 5.0 6.4 eh76047 dh76068 f27d 700 16 6.9 3.0 2.4 5.1 6.5 eh76068 dh76100 f27d 400 23 10.2 4.5 3.5 5.2 6.7 eh76100 dh76150 f27d 140 34 15.2 6.6 5.1 5.2 6.8 eh76150 (1) custom cases available on request temperature ranges: operating junction (t j ) : -55 c to +150 c storage : -65 c to +150 c typical junction capacitance reverse voltage vr (v) 0.10 1.00 0.1 0.01 100 100.00 c j (pf) profils in cj 76010 76015 76022 76033 76047 76068 76100 76150 10 10.00 sales offices: visit our web site at http://www.temex.net power generation diodes selection guide 12-40 vol. 1 sales offices: visit our web site at http://www.temex.net selection guide page s tep reco ver y diodes -s t and ard 12-42 - surf a ce mount pla s tic p a cka ges 12-43 silicon mul tiplier v ara ct or s 12-45 power generation diodes 12-41 vol. 1 power generation diodes step recovery diodes and multiplier varactor applications a step recovery diode (srd) generates pulses that can be used to multiply frequencies, and to set up reference points, e.g. for synchronizing test instruments. this device operates by alternately producing and consuming a charge, based on the frequency of its input signal. during forward bias, the srd conducts and builds up its charge. during reverse bias, the srd maintains conduction by consuming its charge. when the charge has been fully consumed, the srd snaps off, i.e. very quickly reverts to zero conduction. this device acts as a switch, controlling current ?w by alternately storing and releasing its charge, forming pulses at a repetition rate equal to the frequency of its input. the output of a step recovery diode is most often used in two ways: a pulse train can be applied to resonant circuits, which provides output power at a frequency above that of the original input, a pulse train can be used to develop a series of frequencies at multiples of the original input frequencies. typical applications of step recovery diodes include oscillators, power transmitters and drivers, for telecommunications, telemetry, radar and test equipment. in choosing a srd, the signi?ant characteristics include: output frequency (f o ) ; breakdown voltage (v br ) ; junction capacitance (c j ) ; minority carrier lifetime ( l ); snap-off time (t so ) ; thermal resistance (r th ) and output power (p o ). multiplier varactors a multiplier varactor is a physical stack of series-connected srd units. this con?uration is capable of multiplying power. packages for multiplier varactors are designed to dissipate the power yield power out most of these packages hold from 2 to 4 chips, this type of components are available on customer request. step recovery diodes and multiplier varactor applications power in ( ( sales offices: visit our web site at http://www.temex.net 12-42 vol. 1 sales offices: visit our web site at http://www.temex.net power generation diodes step recovery diodes (srd) eh541 c2a 160 30 1.5 25 90 140 dh541 a22e 30 f27d m208 eh542 c2a 220 50 1.5 40 150 250 dh542 a22e 25 f27d m208 eh543 c2a 110 30 1.0 20 90 140 dh543 a22e 40 f27d m208 eh544 c2a 140 50 1.0 35 150 250 dh544 a22e 35 f27d m208 eh545 c2a 55 25 0.4 10 75 100 dh545 a22e 70 f27d m208 eh546 c2a 40 15 0.3 6 60 80 dh546 a22e 100 f27d m208 step recovery diodes (s.r.d.) description these diodes use mesa technology and oxide passivation. they support fast switching and multiplier applications: very short pulse generation, ultra fast waveform shaping, comb generation, high order multiplication, at moderate power ratings. (1) custom cases available on request temperature ranges: (2) c t = c j + c b operating junction (t j ) : -55 c to +150 c storage : -65 c to +175 c type case ? v pf ns ps type case (1) ?/w other cases (1) typ. min. max min. typ. max c b =0.1pf max c b =0.18pf c b =0.12pf (2) (2) (2) test conditions n/a ir=10 a vr =6 v if =10ma if = 10 ma pdiss = 1 w f = 1 mhz ir = 6 ma vr = 10 v in f 27d gold breakdown junction min. car. snap-off thermal dia voltage capacitance lifetime time r esistance ? v br c j t i t so r th chip diodes chip and packaged diodes packaged diodes characteristics at 25? 12-43 vol. 1 sales offices: visit our web site at http://www.temex.net power generation diodes plastic package surface mount step recovery diodes plastic package surface mount s.r.d. description our srd diodes are also available in plastic package. they incorporate a passivated mesa technology. this family is designed for a low cost medium to high volume market that may be supplied in tape and reel for automated pick and place assembly on surface mount circuit boards. application the dh54x series support fast switching and multiplier applications: ?very short pulse generation ?ultra fast waveform shaping ?comb generation ?high order multiplication at moderate power ratings. temperature ranges operating junction (tj) : -55? to +125? storage : -55 c to +150 c breakdown junction minority snapp-off v br (v) capacitance carrier time t so cj (pf) lifetime t l (ns) (ps) test ir = 10 a vr = 6 v if = 10 ma if = 10 ma conditions f = 1 mhz ir = 6 ma vr = 10 v type min. max. min. typ. max. dh541 30 1.5 25 90 140 dh542 50 1.5 40 150 250 dh543 30 1.0 20 90 140 dh544 50 1.0 35 150 250 dh545 25 0.4 10 75 100 dh546 15 0.3 6 60 80 packages sod323 sot23 sot23 sot23 sot143 packages dh541 dh541-60 dh541-51 dh541-53 dh541-54 dh541-70 dh542 dh542-60 dh542-51 dh542-53 dh542-54 dh542-70 dh543 dh543-60 dh543-51 dh543-53 dh543-54 dh543-70 dh544 dh544-60 dh544-51 dh544-53 dh544-54 dh544-70 dh545 dh545-60 dh545-51 dh545-53 dh545-54 dh545-70 dh546 dh546-60 dh546-51 dh546-53 dh546-54 dh546-70 (1) other con?uration available on request. 12-44 vol. 1 sales offices: visit our web site at http://www.temex.net power generation diodes plastic package surface mount step recovery diodes how to order? dh541 - 51 t3 diode type package conditioning information 51: single sot23 t3: 3000 pieces 53: dual common tape & reel cathode sot23 t10: 1 0000 pieces 54: dual common tape & reel anode sot23 blank: bulk 60: single sod323 70: dual sot143 12-45 vol. 1 sales offices: visit our web site at http://www.temex.net power generation diodes silicon multiplier varactor silicon multiplier varactors these silicon multiplier varactors (from 0.2 to 25 ghz) are designed for harmonic generation of high power levels (stack con?uration) and/or at high multiplication orders. dh294 m208b 1 0.2 - 2 45 70 4.0 7.0 125 400 300 0.5 2 dh200 bh142b 1 0.5 - 2 90 140 5.5 7.0 250 1000 8 20.0 2 dh270 s268-w1 1 2 - 3 80 110 4.0 5.5 160 700 10 15.0 2 dh110 f27d 1 2 - 4 60 90 3.0 4.0 100 400 25 9.0 2 dh293 f60d 1 3 - 6 50 70 2.0 3.0 60 250 30 6.0 2 dh252 f27d 1 2 - 8 40 60 0.9 2.0 35 200 50 3.0 2 dh256 f27d 1 5 - 12 30 45 0.5 1.1 20 120 60 2.0 2 dh292 f27d 1 8 - 16 20 35 0.2 0.5 10 75 70 0.6 2 dh267 f27d 1 10 - 25 15 25 0.2 0.3 6 60 100 0.2 2 description packaged diodes temperature ranges: operating junction (t j ) : -55 c to +150 c storage : -65 c to +175 c test conditions n/a n/a i f = 10 ma v r = 10 v i f = 10 ma i r = 6 ma v r = 6 v f = 1 mhz i r = 10 ? f o = (n)f i characteristics at 25? output freq. f o breakdown voltage v br junction capacitance c j min. car. lifetime i snap-off time t so thermal resistance r th power output p o min. max min. max min. max max typ. (n) vpfnsps c/ww type case ghz varactor chips per package 12-47 vol. 1 microwave silicon components case styles page a22e ..................... 1 2-48 bh28 ..................... 1 2-48 bh32 ..................... 1 2-48 bh35 ..................... 1 2-48 bh142a ..................... 1 2-49 bh142b ..................... 1 2-49 bh142c ..................... 1 2-49 bh142d ..................... 1 2-49 bh142e ..................... 1 2-49 bh142f ..................... 1 2-49 bh167 ..................... 1 2-51 bh167s ..................... 1 2-51 bh198 ..................... 1 2-51 f27d ..................... 1 2-54 f30 ..................... 1 2-54 f51 ..................... 1 2-54 f54 ..................... 1 2-54 f54s ..................... 1 2-55 f60 ..................... 1 2-55 f60d ..................... 1 2-55 m208a ..................... 1 2-55 m208b ..................... 1 2-55 m208c ..................... 1 2-55 m208d ..................... 1 2-55 m208e ..................... 1 2-55 m208f ..................... 1 2-56 s268/w1 ..................... 1 2-56 to39 ..................... 1 2-57 w2 ..................... 1 2-57 page bh15 ..................... 1 2-48 bh16 ..................... 1 2-48 bh101 ..................... 1 2-49 bh143 ..................... 1 2-50 bh151 ..................... 1 2-50 bh152 ..................... 1 2-50 bh153 ..................... 1 2-50 bh154 ..................... 1 2-50 bh155 ..................... 1 2-50 bmh76 ..................... 1 2-53 page smd3 ...................... 1 2-56 smd4 ...................... 1 2-56 smd6 ...................... 1 2-56 smd8 ...................... 1 2-56 sod323 ...................... 1 2-56 sot23 ...................... 1 2-56 sot143 ...................... 1 2-57 sot323 ...................... 1 2-57 case styles g eneral p urpose s urface m ount d evices page bh141 ...................... 1 2-49 bh158 ...................... 1 2-51 bh158am ...................... 1 2-51 bh200a ...................... 1 2-52 bh202 ...................... 1 2-52 bh203a ...................... 1 2-52 bh203b ...................... 1 2-52 bh203c ...................... 1 2-52 bh204 ...................... 1 2-52 bh300 ...................... 1 2-53 bh301 ...................... 1 2-53 bh303 ...................... 1 2-53 bh403a ...................... 1 2-53 bh405 ...................... 1 2-53 p ower page c2 ..................... 1 2-54 c4 ..................... 1 2-54 c hip v ersion s trip l ine / m icro s trip sales offices: visit our web site at http://www.temex.net 12-48 vol. 1 sales offices: visit our web site at http://www.temex.net microwave silicon components case styles e ? 1.7 ? 2.1 .067 dia .083 dia d ? 0.35 ? 0.41 .014 dia .016 dia c 25.4 1 b 25.4 1 a 4 4.4 .157 .173 sym min. max min. max bol millimeters inches e 0.09 0.11 .0035 .0043 d 0.28 0.48 .011 .019 c 3.82 4.58 .15 .18 b 0.15 0.35 .006 .014 a 1.17 1.37 .046 .054 sym min. max min. max bol millimeters inches e a b c d a22e c b =0.1pf e a b c d bh15 c b =0.1pf e 0.08 0.12 .003 .005 d 0.45 0.55 .018 .022 c 4.58 5.58 .180 .220 b 0.66 0.86 .026 .034 a 2.4 2.6 .094 .102 sym min. max min. max bol millimeters inches c 2.04 2.50 .080 .098 b ? 1.93 ? 2.13 .076 dia .084 dia a ? 3.00 ? 3.20 .118 dia .126 dia sym min. max min. max bol millimeters inches c 3.5 3.9 .138 .154 b ? 3.86 ? 4.26 .152 dia .168 dia a ? 5.64 ? 6.04 .222 dia .238 dia sym min. max min. max bol millimeters inches b e c d a bh16 c b =0.16pf a b c bh28 c b =0.2pf h 5.14 5.93 .202 .233 g 1.37 1.77 .054 .070 f 1.78 1.98 .070 .078 e 1.37 1.77 .054 .070 d ? 1.52 ? 1.62 .060 dia .064 dia c ? 3.96 ? 4.16 .156 dia .164 dia b ? 3.05 ? 3.25 .120 dia .128 dia a ? 1.52 ? 1.62 .060 dia .064 dia sym min. max min. max bol millimeters inches c a b bh32 c b =0.2pf c d g h e a b f bh35 c b =0.25pf 12-49 vol. 1 microwave silicon components case styles e 0.05 0.15 .002 .006 d 0.55 0.65 .022 .026 c 5 .197 b 0.28 0.48 .011 .019 a 2.3 2.7 .091 .106 sym min. max min. max bol millimeters inches f 0.70 .028 e 4.70 5.10 .185 .201 d 12.8 13.4 .504 .526 c 6. 40 unf-3a b ? 5.20 ? 5.40 .205 dia .203 dia a ? 6.50 ? 6.70 .256 dia .263 dia sym min. max min. max bol millimeters inches b e a c a d bh101 c b =0.15pf d e a f c b bh141 c b =0.4pf b 1.24 1.58 .049 .062 a ? 1.90 ? 2.20 .075 dia .087 dia sym min. max min. max bol millimeters inches a e d b d c f g bh142a c b =0.2pf b a bh142b c b =0.2pf e 0.06 0.10 .0024 .0039 d 0.55 0.65 .022 .026 c 5 .197 b 1.24 1.58 .049 .062 a ? 1.90 ? 2.20 .075 dia .087 dia sym min. max min. max bol millimeters inches e 0.06 0.10 .0024 .0039 d 0.55 0.65 .022 .026 c 5 .197 b 1.24 1.58 .049 .062 a ? 1.90 ? 2.20 .075 dia .087 dia sym min. max min. max bol millimeters inches b e d a c bh142c c b =0.2pf e d a c e bh142d c b =0.2pf g 0.1 0.5 .004 .020 f 0.06 0.10 .0024 .0039 e 0.55 0.65 .022 .026 d 2.5 .098 c 2.10 2.70 .083 .106 b 1.24 1.58 .049 .062 a ? 1.90 ? 2.20 .075 dia .087 dia sym min. max min. max bol millimeters inches e 0.06 0.10 .0024 .0019 d 0.55 0.65 .022 .026 c 5 .197 b 1.24 1.58 .049 .062 a ? 1.90 ? 2.20 .075 dia .087 dia sym min. max min. max bol millimeters inches e 0.06 0.10 .0024 .0039 d 0.55 0.65 .022 .026 c 10 .394 b 1.24 1.58 .049 .062 a ? 1.90 ? 2.20 .075 dia .087 dia sym min. max min. max bol millimeters inches a c c d b e bh142e c b =0.2pf a c d e b bh142f c b =0.2pf sales offices: visit our web site at http://www.temex.net 12-50 vol. 1 sales offices: visit our web site at http://www.temex.net microwave silicon components case styles e 0.08 0.12 .003 .005 d 0.45 0.55 .094 .102 c 7.60 .299 b 0.45 0.55 .018 .022 a ? 2.40 ? 2.60 .094 .102 sym min. max min. max bol millimeters inches b c a e d bh143 c b =0.1pf e b d a c bh151 c b =0.25pf e 0.08 0.12 .003 .005 d 0.35 0.45 .014 .018 c 3.70 4.30 .147 .169 b 0.20 0.30 .008 .012 a 1.17 1.37 .046 .054 sym min. max min. max bol millimeters inches e 0.08 0.12 .003 .005 d 0.45 0.55 .018 .022 c 6.15 6.55 .242 .258 b 0.91 1.01 .036 .040 a 1.68 1.88 .066 .074 sym min. max min. max bol millimeters inches e b d a c bh152 c b =0.05pf e b d a c c bh153 c b =0.13pf e 0.08 0.12 .003 .005 d 0.35 0.45 .014 .018 c 3.70 4.30 .147 .169 b 0.20 0.30 .008 .012 a 1.17 1.37 .046 .054 sym min. max min. max bol millimeters inches e 0.08 0.12 .003 .005 d 0.45 0.55 .018 .022 c 6.15 6.55 .242 .258 b 0.91 1.01 .036 .040 a 1.68 1.88 .066 .074 sym min. max min. max bol millimeters inches e 0.08 0.12 .003 .005 d 0.45 0.55 .018 .022 c 6.15 6.55 .242 .258 b 0.91 1.01 .036 .040 a 1.68 1.88 .066 .074 sym min. max min. max bol millimeters inches e c c b d a bh154 c b =0.13pf e c c b a d bh155 c b =0.13pf 12-51 vol. 1 microwave silicon components case styles d 4.00 4.50 .157 .177 c ? 5.10 ? 5.50 .200 dia .216 dia b 4.90 5.30 .193 .209 a ? 6.50 ? 6.70 .256 dia .264 dia sym min. max min. max bol millimeters inches d 4.1 4.4 .16 .173 c ? 5.2 ? 5.5 .204 dia .216 dia b 4.7 5.2 .185 .205 a ? 5.7 ? 6.1 .224 dia .240 dia sym min. max min. max bol millimeters inches b d a c bh158 c b =0.4pf b d a c bh158am c b =0.4pf f 0.71 0.81 .028 .032 e ? 0.61 ? 0.66 .024 dia .026 dia d 1.55 1.75 .061 .069 c ? 1.22 ? 1.32 .048 dia .052 dia b 1.86 2.06 .073 .081 a ? 1.42 ? 1.62 .056 dia .064 dia sym min. max min. max bol millimeter inches g 1.86 2.06 .073 .081 f 0.71 0.81 .028 .032 e ? 0.61 ? 0.66 .024 dia .026 dia d 1.55 1.75 .060 .070 c ? 1.22 ? 1.32 .048 dia 052 dia b 2.57 2.87 .101 .113 a ? 1.42 ? 1.62 .056 dia .064 dia sym min. max min. max bol millimeters inches e e a c f d g b bh167 c b =0.12pf a f d b e c bh167s c b =0.12pf l 4 .157 d1 1.55 1.75 .06 .069 d 1.68 1.88 .066 .074 c 0.07 0.15 .003 .006 b2 0.4 0.6 .016 .024 b1 0.92 1.12 .036 .044 a1 0.86 1.25 .034 .049 a 0.66 0.86 .026 .034 sym min. max min. max bol millimeter inches 4 (.157) 2 (.079) 1.02 (.040) 1.25 (.049)max anode in cathod cathod 0.5 (.020) 1.70 (.070) dimensions in mm (inches) tg : 0.1 (.004) 4 (.079) 2 (.079) 0.1 (.004) bh198 c b =0.6pf sales offices: visit our web site at http://www.temex.net 12-52 vol. 1 sales offices: visit our web site at http://www.temex.net microwave silicon components case styles m 43 47 43 47 l 4.12 4.52 .162 .178 k ? 12.14 ? 12.24 .478 dia .482 dia j ? 3.10 ? 3 .25 .122 dia .128 dia i 1.25 1.29 .049 .051 h 16.30 16.70 .642 .658 g 6.30 6.40 .248 .252 f 0.23 0.27 .009 .011 e 2.50 2..67 .098 .105 d 18.26 18.67 .719 .735 c 24.64 24.89 .970 .980 b 6.78 7.19 .267 .283 a ? 9.4 ? 9.64 .370 dia .380 dia sym min. max min. max bol millimeters inches l f l k i h g j a e c b d bh200a c b =0.4pf g m m j k h i b e c l d a f bh202 c b =0.15pf l 43 47 43 47 k 5.49 5.89 .216 .232 j ? 30.48 ? 3 1.50 1.200 dia 1.240 dia i 6.30 6.40 .248 .252 h 18.26 18.67 .719 .735 g 24.64 24.89 .970 .980 f ? 3.10 ? 3.25 .122 dia .128 dia e 0.10 0.127 .004 .005 d 6.78 7.19 .267 .283 c 3.86 4.27 .152 .168 b 2.50 2.667 .098 .105 a ? 12.50 ? 12.90 .492 dia .508 dia sym min. max min. max bol millimeters inches g m m j k h i b e c l d a f bh203a c b =0.15pf m 43 47 43 47 l 4.12 4.52 .162 .178 k ? 12.14 ? 12.24 .478 dia .482 dia j ? 3.10 ? 3 .25 .122 dia .128 dia i 1.25 1.29 .049 .051 h 16.30 16.70 .642 .658 g 6.30 6.40 .248 .252 f 0.23 0.27 .009 .011 e 2.50 2.67 .098 .105 d 18.26 18.67 .719 .735 c 24.64 24.89 .970 .980 b 6.78 7.19 .267 .283 a ? 9.4 ? 9.64 .370 dia .380 dia sym min. max min. max bol millimeters inches g m m j k h i b e c l d a f bh203b c b =0.15pf m 43 47 43 47 l 4.12 4.52 .162 .178 k ? 12.14 ? 12.24 .478 dia .482 dia j ? 3.10 ? 3.25 .122 dia .128 dia i 1.25 1.29 .049 .051 h 16.30 16.70 .642 .658 g 6.30 6.40 .248 .252 f 0.23 0.27 .009 .011 e 2.50 2.67 .098 .105 d 18.26 18.67 .719 .735 c 24.64 24.89 .970 .980 b 6.78 7.19 .267 .283 a ? 9.4 ? 9.64 .370 dia .380 dia sym min. max min. max bol millimeters inches g m m j k h i b e c l d a f bh203c c b =0.15pf m 43 47 43 47 l 4.12 4.52 .162 .178 k ? 12.14 ? 12.24 .478 dia .482 dia j ? 3.10 ? 3 .25 .122 dia .128 dia i 1.25 1.29 .049 .051 h 16.30 16.70 .642 .658 g 6.30 6.40 .248 .252 f 0.23 0.27 .009 .011 e 2.50 2.67 .098 .105 d 18.26 18.67 .719 .735 c 24.64 24.89 .970 .980 b 6.78 7.19 .267 .283 a ? 9.4 ? 9.64 .370 dia .380 dia sym min. max min. max bol millimeters inches g m m j k h i b e c l d a f bh204 c b =0.15pf m 43 47 43 47 l 4.12 4.52 .162 .178 k ? 12.14 ? 12.24 .478 dia .482 dia j ? 3.10 ? 3 .25 .122 dia .128 dia i 1.25 1.29 .049 .051 h 16.30 16.70 .642 .658 g 6.30 6.40 .248 .252 f 0.23 0.27 .009 .011 e 2.50 2.67 .098 .105 d 18.26 18.67 .719 .735 c 24.64 24.89 .970 .980 b 6.78 7.19 .267 .283 a ? 9.4 ? 9.64 .370 dia .380 dia sym min. max min. max bol millimeters inches 12-53 vol. 1 i 3.25 3.45 .128 .136 h 5.60 6.00 .220 .236 g 6 - 32 unc - 3a f 2.97 3.38 .177 .133 e 0.20 0.30 .008 .012 d 20 - .787 - c 6.30 6.40 .248 .252 b 13.95 15.05 .549 .593 a ? 6.5 ? 6.7 .256 dia .264 dia sym min. max min. max bol millimeters inches j 1.52 1.62 .060 .064 i 2.82 3.02 .111 .119 h 4.42 4.82 .174 .190 g 4 - 40 unc - 3a f 2.16 2.56 .85 .101 e 0.18 0.20 .007 .008 d 15.67 16.18 .617 .637 c 4.70 4.80 .185 .189 b 9.46 10.54 .372 .415 a ? 3.00 ? 3.20 .118 dia .126 dia sym min. max min. max bol millimeters inches i 3.25 3.45 .128 .136 h 5.60 6.00 .220 .236 g 6 - 32 unc - 3a f 2.97 3.38 .177 .133 e 0.20 0.30 .008 .012 d 20 - .787 - c 6.30 6.40 .248 .252 b 13.95 15.05 .549 .593 a ? 6.5 ? 6.7 .256 dia .264 dia sym min. max min. max bol millimeters inches microwave silicon components case styles k 0.50 0.70 .020 .028 j 0.20 0.24 .008 .010 i 1.95 2.15 .077 .085 h 1.47 1.67 .058 .066 g 5.1 5.3 .201 .209 f 3.18 3.68 .125 .145 e ? 2.36 ? 2.52 .093 dia .099 dia d 3.1 3.3 .122 .130 c 4 4.2 .157 .165 b 3.02 3.22 .119 .127 a 10.3 10.5 .406 .413 sym min. max min. max bol millimeters inches b h j e a k g d d i f f c bmh76 c b =0.15pf f d c g h e a i b bh300 c b =0.4pf f d c g h a i b e j bh301 c b =0.2pf c g d f h i a e b bh303 c b =0.4pf j 0.97 1.07 .038 .042 i 2.49 2.59 .098 .102 h 2.9 3.1 .114 .122 g 22.4 22.6 .882 .890 f 0.20 0.30 .0079 .0118 e 6.1 6.5 .240 .256 d 9.2 9.6 .362 .378 c 5/16 - 24 unf - 2a b 14 14.2 .551 .559 a ? 19.6 ? 19.8 .772 dia .780 dia sym min. max min. max bol millimeters inches a h f j i b n g e l k c d m bh403a c b =0.3pf n - 3 - .120 m typical: 45 l 9.68 10.08 .381 .397 k ? 10.46 ? 10.87 .412 dia .428 dia j 2.72 3.12 .107 .123 i 1.57 1.98 .062 .078 h 0.10 0.15 .004 .006 g 1.78 2.03 .070 .080 f 4.39 4.64 .173 .183 e 1.90 2.16 .075 .085 d 25.4 - 1 - c 10 - 32 unf 3a b ? 12.50 ? 12.90 .492 dia .508 a 18.67 19.43 .735 .765 sym min. max min. max bol millimeters inches h i j g g c b a e d f i bh405 c b =0.4pf sales offices: visit our web site at http://www.temex.net 12-54 vol. 1 sales offices: visit our web site at http://www.temex.net microwave silicon components case styles c2j 1740 1800 68.50 70.87 c2h 1440 1500 56.69 59.06 c2g 1140 1200 44.88 47.24 c2e 940 1000 37.01 39.37 c2d 840 900 33.07 35.43 c2c 740 800 29.13 31.50 c2b 540 600 21.26 23.62 c2a 340 400 13.39 15.75 con min. max min. max fig a (?) a () a a c2 c4g 1500 2500 59.06 98.43 c4f 1000 1500 39.37 59.06 c4e 700 1000 27.56 39.37 c4d 500 700 19.69 27.56 c4c 400 500 15.75 19.69 c4b 300 400 11.81 15.75 c4a 200 300 7.87 11.81 con min. max min. max fig a (?) a () a a c4 d 0.4 0.6 .016 .024 c 1.4 1.6 .055 .063 b ? 1.93 ? 2.13 .076 dia .084 dia a ? 2.94 ? 3.14 .116 dia .124 dia sym min. max min. max bol millimeters inches a d c b f30 c b =0.25pf h ? 2.01 ? 2.05 .079 dia .081 dia g ? 2.95 ? 3.15 .116 dia .124 dia f ? 1.55 ? 1.59 .061 dia .063 dia e ? 1.55 ? 1.59 .061 dia .063 dia d 5.15 5.65 .202 .222 c 1.55 1.59 .061 .063 b 1.74 1.82 .069 .072 a 1.55 1.59 .061 .063 sym min. max min. max bol millimeters inches g f c d b a e h f27d c b =0.18pf d 1.47 1.67 .058 .066 c ? 1.47 ? 1.67 .058 dia .066 dia b ? 1.93 ? 2.13 .076 dia .084 dia a 4.9 5.3 .193 .209 sym min. max min. max bol millimeters inches c d d a b f51 c b =0.1pf f 1.0 1.2 .039 .047 e 0.40 0.47 .016 .019 d ? 0.61 ? 0.66 .024 dia .029 dia c ? 1.19 ? 1.35 .047 dia .053 dia b 1.70 2.00 .067 .079 a ? 2.00 ? 2.16 .079 dia .085 dia sym min. max min. max bol millimeter inches a d b e f c f54 c b =0.2pf 12-55 vol. 1 microwave silicon components case styles d 0.36 0.46 .014 .018 c 0.84 0.94 .073 .047 b ? 1.19 ? 1.35 .047 dia .053 dia a ? 2.00 ? 2.16 .079 dia .085 dia sym min. max min. max bol millimeters inches a d c b f54s c b =0.2pf f 1.51 1.63 .059 .064 e 1.81 1.95 .071 .077 d 3.76 4.21 .148 .166 c ? 1.52 ? 1.62 .060 dia .064 dia b ? 1.93 ? 2.13 .076 dia .084 dia a ? 2.95 ? 3.15 .116 dia .124 dia sym min. max min. max bol millimeter inches a e d f c b f60 c b =0.2pf b 0.95 1.35 .037 .053 a ? 1.07 ? 1.47 .042 dia .058 dia sym min. max min. max bol millimeters inches b a m208b c b =0.12pf f 1.52 1.64 .060 .065 e 0.95 1.09 .037 .043 d 2.91 3.36 .115 .132 c ? 1.52 ? 1.62 .060 dia .064 dia b ? 1.93 ? 2.13 .076 dia .084 dia a ? 2.95 ? 3.15 .116 dia .124 dia sym min. max min. max bol millimeter inches a e d f c b f60d c b =0.25pf g 0.1 0.4 .004 .015 f 0.06 0.1 .0024 .004 e 0.55 0.65 .022 .026 d 2.5 .100 c 1.3 1.7 .052 .068 b 0.95 1.35 .037 .053 a ? 1,07 ? 1,47 .042 dia .058 dia sym min. max min. max bol millimeter inches d d b c f g a e m208a c b =0.12pf e 0.06 0.1 .0024 .004 d 0.55 0.65 .022 .026 c 5 .200 b 0.95 1.35 .037 .053 a ? 1.07 ? 1.47 .042 dia .058 dia sym min. max min. max bol millimeters inches b e a d c m208c c b =0.12pf e 0.06 0.1 .0024 .004 d 0.55 0.65 .022 .026 c 5 .200 b 0.95 1.35 .037 .053 a ? 1.07 ? 1.47 .042 dia .058 dia sym min. max min. max bol millimeters inches a c b e d m208d c b =0.12pf e 0.06 0.1 .0024 .004 d 0.55 0.65 .022 .026 c 5 .200 b 0.95 1.35 .037 .053 a ? 1.07 ? 1.47 .042 dia .058 dia sym min. max min. max bol millimeters inches e b d c a c m208e c b =0.12pf sales offices: visit our web site at http://www.temex.net 12-56 vol. 1 sales offices: visit our web site at http://www.temex.net microwave silicon components case styles f 0.06 0.1 .0024 .004 e 0.55 0.65 .022 .026 d 5 .200 c 9.8 10.2 .392 .408 b 0.95 1.35 .037 .053 a ? 1.07 ? 1.47 .042 dia .058 dia sym min. max min. max bol millimeter inches f b e a d c m208f c b =0.12pf i 0.38 0.62 .015 .024 h 0.64 0.88 .025 .035 g 0.51 0.60 .020 .024 f ? 2.44 ? 2.64 .096 dia .104 dia e 0.21 0.31 .008 .012 d 1.71 2.00 .067 .079 c 3 - 48 unc 2a b 5.01 5.46 .197 .215 a ? 2.85 ? 3.25 .112 dia .128 dia sym min. max min. max bol millimeter inches b d e f a g h i c s268/w1 c b =0.2pf e 2.69 2.89 .106 .114 d 3.71 3.91 .146 .154 c 4.4 4.6 .173 .181 b ? 2.19 ? 2.39 .086 dia .094 dia a ? 2.44 ? 2.64 .096 dia .104 dia sym min. max min. max bol millimeters inches a b e dc smd3 c b =0.11pf e typical 0,2 typical .008 d typical 1 typical .039 c 0.3 0.8 .012 .031 b 2.9 3.5 .114 .138 a 2 2.3 .079 .091 sym min. max min. max bol millimeters inches b 4.70 5.2 .185 .205 c 0.20 0.38 .008 .015 sym min. max min. max bol millimeters inches a b c d e a smd4 c b =0.24pf e typical 0,20 typical .008 d typical 1.20 typical .047 c 0.3 0.8 .012 .031 b 4.70 5.2 .185 .205 a 2.5 2.8 .098 .110 sym min. max min. max bol millimeters inches a b e c d smd6 c b =0.24pf b c a a smd8 k 0.1 0.13 0.004 0.005 j 0.53 0.56 0.021 0.022 i 0.05 0.1 0.002 0.0004 h 1.07 1.14 0.042 0.045 g 0.43 0.46 0.017 0.018 f 1.78 2.04 0.070 0.080 e 0.94 typ. 0.037 typ. d 0.43 0.45 0.017 0.020 c 2.36 2.49 0.093 0.098 b 1.3 1.35 0.051 0.053 a 2.84 3.02 0.112 0.119 d f g b c a i h j k c sot23 c b =0.2pf h 1.70 .0669 g 0.20 .0078 f 0.15 .0059 e 0.05 .0020 d 0.30 .0118 c 1.10 .043 b 1.25 .049 a 2.50 .098 sym typical typical bol millimeters inches b a d h f e g c sod323 sym min. max min. max bol millimeters millimeters inches inches 12-57 vol. 1 microwave silicon components case styles j max 8 i 0.10 .0039 h 0.12 .0047 g 1.90 .0075 f 0.40 .0157 e 0.80 .0315 d 1.30 .051 c 1.10 .043 b 2.60 .102 a 2.90 .114 sym typical typical bol millimeters inches a c b d e f g h i j 3 4 1 2 sot143 i ? 8.3 ? 8.5 .327 dia .335 dia h ? 0.41 ? 0.48 .016 dia .019 dia g 44 46 44 46 f 0.71 0.81 .028 .032 e 9.40 10.40 .370 .409 d 12.7 .500 c 4.98 5.18 .196 .204 b 6.30 6.40 .248 .252 a ? 9.10 ? 9.30 .358 dia .366 dia sym min. max min. max bol millimeter inches e f g c i a h db to39 c b =0.2pf h 0.71 0.81 .028 .032 g 0.45 0.55 .020 .022 f 3 - 48 unc - 3a e 0.61 0.81 .024 .032 d ? 1.17 ? 1.37 .046 dia .054 dia c 3.40 3.60 .134 .142 b ? 2.46 ? 2.66 .097 dia .105 dia a 4.38 4.68 .172 .184 sym min. max min. max bol millimeters inches b e d f h c a g w2 c b =0.15pf k 0.12 .0047 j 0.43 .017 i 0.1 max. .004 max. h 0.9 .035 g 0.3 .012 f 1.3 .051 e 0.65 .026 d 0.3 .012 c 2.1 .0.83 b 1.25 .043 a 1.9 .075 sym typical typical bol millimeters inches d f g e c b a i h j k sot323 sales offices: visit our web site at http://www.temex.net |
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